View 10-FY07ZAA050SM-L514B28_8540117.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 1 17 aug. 2015 / revision 1 t j =25c, unless otherwise specified flow rpi 1 650 v / 50 a high integration level of rectifier, pfc and inve rter high efficiency input rectifier dual pfc with high efficiency, fast igbt h5+ ultrafast si diode high efficiency hbridge inverter with fast igbt h5 temperature sensor welding charger 10fy07zaa050sml514b28 flow 1 12mm housing schematic features target applications types rectifier diode parameter symbol value unit conditions peak repetitive reverse voltage v rrm 1600 v continuous (direct) forward current i f t j = t jmax t h = 80c 53 a a 2 s total power dissipation p tot t j = t jmax t h = 80c 86 w surge (nonrepetitive) forward current i fsm 50 hz single half sine wave 490 a surge current capability i 2 t t p = 10 ms 50 hz sine t j = 150c 1200 maximum junction temperature t jmax 150 c maximum ratings
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 2 17 aug. 2015 / revision 1 parameter symbol value unit a condition collectoremitter voltage v ces 650 v collector current i c t j = t jmax t s =80 c 28 repetitive peak collector current i crm t p limited by t jmax 90 a a total power dissipation p tot t j = t jmax t s =80 c 57 w turn off safe operating area t j 150c, v ce 650 v 90 gateemitter voltage v ges 20 v maximum junction temperature t jmax 175 c c. t. protection diode parameter symbol value unit conditions peak repetitive reverse voltage v rrm 650 v repetitive peak forward current i frm 180 a continuous (direct) forward current i f t j = t jmax t h = 80c 29 a total power dissipation p tot t j = t jmax t h =80c 52 w maximum junction temperature t jmax 175 c pfc diode parameter symbol value unit maximum junction temperature t jmax 175 c power dissipation p tot t j = t j max t h =80c 33 w repetitive peak forward current i frm 20 a dc forward current i f t j = t j max t h =80c 17 a conditions peak repetitive reverse voltage v rrm 650 v pfc switch
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 3 17 aug. 2015 / revision 1 t j = parameter symbol value unit a condition collectoremitter voltage v ces 650 v collector current i c t j = t j max t s = 80 c 43 repetitive peak collector current i crm t p limited by t j max 150 a total power dissipation p tot t j = t j max t s = 80 c 84 w gateemitter voltage v ges 20 v maximum junction temperature t jmax 175 c parameter symbol value unit maximum junction temperature t jmax 175 c total power dissipation p tot t j = t jmax t h = 80c 55 w repetitive peak forward current i frm 80 a continuous (direct) forward current i f t j = t jmax t h = 80c 28 a conditions peak repetitive reverse voltage v rrm 650 v h-bridge diode lo/hi side h-bridge switch lo/hi side
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 4 17 aug. 2015 / revision 1 parameter symbol unit maximum dc voltage v max 630 v operation temperature t op 55+125 c conditions value parameter symbol unit thermal properties isolation properties isolation voltage v i sol dc voltage t p =2s 4000 v creepage distance min 12,7 mm clearance 7,74 mm comparative tracking index cti >200 c c storage temperature t stg 40+125 operation junction temperature t jop 40+( t jmax 25) conditions value dc capacitor module properties
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 5 17 aug. 2015 / revision 1 pfc switch 25 3,3 4 4,7 125 25 1,69 2,22 125 1,92 150 25 40 125 25 120 125 parameter symbol conditions value unit t j [ c] min typ max static v ge [v] v ce [v] i c [a] v collec toremitter saturation voltage v cesat 15 30 v gateemitter threshold voltage v ge(th) v ge = v ce 0,0003 a gateemitter leakage current i ges 20 0 na collec toremitter cutoff c urrent i ces 0 650 45 none input capacitance c ies f=1mhz 0 25 internal gate resistance r g 30 25 70 nc reverse transfer c apac itanc e c res 7,7 gate c harge q g 15 520 25 2100 pf output capacitance c oes 1,67 k/w thermal thermal resistanc e junction to sink r th(j-s) phasechange material ? =3,4w /mk rectifier diode 25 1,07 1,21 125 1,13 150 25 50 150 1100 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 25 v reverse leakage current i r 1600 a forward voltage v f thermal thermal resistanc e junction to sink r th(j-s) phasec hange material ? =3,4w/mk k/w 0,82 characteristic values
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 6 17 aug. 2015 / revision 1 25 2,46 2,6 125 2,03 150 25 10 150 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 30 v reverse leakage current i r 665 a forward voltage v f thermal thermal resistanc e junction to sink r th(j-s) phasec hange material ? =3,4w/mk k/w 1,83 c. t. protection diode parameter symbol unit v r [v] i f [a] t j [c] min typ max 25 1,67 1,87 125 1,56 150 25 0,14 150 thermal resistanc e junction to sink r th(j-s) phasec hange material ? =3,4w/mk 2,87 k/w 10 v reverse leakage current i rm 650 a thermal forward voltage v f conditions value static pfc diode
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 7 17 aug. 2015 / revision 1 t j = 25 3,3 4 4,7 125 25 1 1,82 2,22 125 2,00 150 25 40 125 25 120 125 parameter symbol conditions value unit t j [ c] min typ max static v ge [v] v ce [v] i c [a] v collec toremitter saturation voltage v cesat 15 50 v gateemitter threshold voltage v ge (th) v ge = v ce 0,0005 a gateemitter leakage current i ges 20 0 na collec toremitter cutoff c urrent i ces 0 650 50 none input capacitance c ies f=1 mhz 0 25 internal gate resistance r g 50 25 120 nc reverse transfer c apac itanc e c res 11 gate c harge q g 15 520 25 3000 pf output capacitance c oes 1,13 k/w thermal thermal resistanc e junction to sink r th(j-s) phasec hange material ? =3,4w/mk 25 1,35 1,77 125 150 25 2,1 150 1,73 k/w thermal resistanc e junction to sink r th(j-s) phasec hange material ? =3,4w/mk thermal v reverse leakage current i r 650 a forward voltage v f 40 t j [c] min typ max static i f [a] parameter symbol conditions value unit v r [v] h-bridge switch lo/hi side h-bridge diode lo/hi side
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 8 17 aug. 2015 / revision 1 100 nf capacitance c t j [c] min typ max -10 parameter symbol conditions value unit tolerance % +10 thermistor parameter symbol unit v ge [v] v ce [v] i c [a] t j [ c] min typ max conditions value mw rated resistance r deviation of r100 r/r r100=1486 25 21,5 k +4,5 % 210 100 4,5 25 k 25 3,5 mw/k 25 3884 25 3964 k power dissipation p bvalue b (25/100) bvalue b (25/50) f vincotech ntc reference power dissipation constant dc capacitor
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 9 17 aug. 2015 / revision 1 date code ul & vinco lot serial wwyy ul vinco lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function pin x y function 1 52,9 0 g13 30 49,8 12,9 dcinv2 2 49,9 0 s13 31 52,9 12,9 dcinv2 3 41,9 0 ph2 32 52,9 15,9 dcinv1 4 39,2 0 ph2 33 41,8 14,4 dc+inv 5 36,2 0 s14 34 39,1 14,4 dc+inv 6 33,2 0 g14 35 29,2 9,2 pfc2 7 22 0 pfc+ 36 15 9,2 pfc1 8 22 3,5 pfc+ 37 25 17,4 pfc2in2 9 13,4 0 dc+rect 38 16,5 17 pfc1in2 10 10,7 0 dc+rect 39 25 20,9 pfc2in1 11 2,7 0 dcrect 40 17 20,5 pfc1in1 12 0 0 dcrect 13 0 13 acin1 14 0 15,7 acin1 15 0 23,7 acin2 16 0 26,4 acin2 17 7,7 28,8 therm1 18 10,7 28,8 therm2 19 14,6 28,8 s25 20 17,6 28,8 g25 21 20,6 28,8 g27 22 23,6 28,8 s27 23 33,2 28,8 g12 24 36,2 28,8 s12 25 39,2 28,8 ph1 26 41,9 28,8 ph1 27 49,9 28,8 s11 28 52,9 28,8 g11 29 49,8 15,9 dcinv1 nnnnnnnnnnnnnnnnnnnnnnnn name pin table [mm] pin table [mm] in packaging barcode as ordering code & marking outline l514b28 10fy07zaa050sml514b28 version without thermal paste 12mm housing text datamatrix l514b28 in datamatrix as ordering code nn-nnnnnnnnnnnnnn nnnnnnnn wwyy ul vinco lllll ssss
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 10 17 aug. 2015 / revision 1 ntc ntc thermistor c.t. protection diode 50a hbridge switch lo/hi side 40a capacitor 1600v igbt 650v 630v hbridge diode lo/hi side rectifier 650v 50a rectifier diode dc capacitor c1,c2 id t11, t13 / t12, t14 d31, d32, d33, d34 igbt fwd component d12, d14 / d11, d13 fwd d26, d28 fwd 650v 10a identification t25,t27 d25,d27 comment 650v 650v voltage current function 30a pfc switch 30a pfc diode pinout
10-FY07ZAA050SM-L514B28 target datasheet copyright vincotech 11 17 aug. 2015 / revision 1 standard packaging quantity (spq) sample handling instruction 100 >spq standard

▲Up To Search▲

Price & Availability of 10-FY07ZAA050SM-L514B28

	To Download 10-FY07ZAA050SM-L514B28 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .